The Design of Normally-off 1300V 4H-SiC VJFET
Authors
Gang Chen, Yonghong Tao, Song Bai, Ao Liu, Runhua Huang, Lin Wang, Yun Li, Zhifei Zhao
Corresponding Author
Gang Chen
Available Online December 2015.
- DOI
- 10.2991/icmse-15.2015.248How to use a DOI?
- Keywords
- 4H-SiC, VJFET, ohmic, trench, implant
- Abstract
Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. The Normally-off 1300V SiC VJFET device’s current density is 260 A/cm2 and current is 8 A at VG= 7 V and VD = 2 V, with related specific on-resistance 7.56 m •cm2. The device exceeds 1300 V at gate bias VG = 0 V.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Gang Chen AU - Yonghong Tao AU - Song Bai AU - Ao Liu AU - Runhua Huang AU - Lin Wang AU - Yun Li AU - Zhifei Zhao PY - 2015/12 DA - 2015/12 TI - The Design of Normally-off 1300V 4H-SiC VJFET BT - Proceedings of the 2015 6th International Conference on Manufacturing Science and Engineering PB - Atlantis Press SP - 1370 EP - 1373 SN - 2352-5401 UR - https://doi.org/10.2991/icmse-15.2015.248 DO - 10.2991/icmse-15.2015.248 ID - Chen2015/12 ER -