Performance Differences of Ta2O5 Films under Different Magnetron Sputtering Conditions
Authors
Mengchao Li, Hai–ning Cui, He Wang, Zhenxing Wang, Yanan Liu
Corresponding Author
Mengchao Li
Available Online April 2017.
- DOI
- 10.2991/icmmct-17.2017.184How to use a DOI?
- Keywords
- Magnetron Sputtering; Ta2O5 films; Impedance spectrum; Transmittance
- Abstract
Ta2O5 films are applied widely in semiconductor materials, storage devices, optical devices and many other areas. There are many methods to prepare Ta2O5 thin films. In this paper, we have explored the effects on the properties of films at different experimental conditions in the process of RF magnetron sputtering. In the experiments, the sputtering time and the O2-Ar flow ratio were changed. Then the properties of the Ta2O5 films prepared under different experimental conditions were compared, especially their electrochemical impedance characteristics and their optical transmittance properties.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Mengchao Li AU - Hai–ning Cui AU - He Wang AU - Zhenxing Wang AU - Yanan Liu PY - 2017/04 DA - 2017/04 TI - Performance Differences of Ta2O5 Films under Different Magnetron Sputtering Conditions BT - Proceedings of the 2017 5th International Conference on Machinery, Materials and Computing Technology (ICMMCT 2017) PB - Atlantis Press SP - 920 EP - 923 SN - 2352-5401 UR - https://doi.org/10.2991/icmmct-17.2017.184 DO - 10.2991/icmmct-17.2017.184 ID - Li2017/04 ER -