Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology

Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell

Authors
Xianfeng Feng, Chang Liu
Corresponding Author
Xianfeng Feng
Available Online April 2016.
DOI
https://doi.org/10.2991/icmit-16.2016.150How to use a DOI?
Keywords
the structure of Al-p+ layer, cooling rate, n-type silicon solar cell
Abstract
In this paper, we have made a simple Al-p+ layer on n-type silicon wafers with a commercially available aluminum paste, screen-printing and traditional annealing furnace. The influences of firing cooling rate on the structure and thickness of Al-Si recrystalline layer are discussed. By changing the cooling rate and peak temperature, we find the general relationship between cooling rate and the structure of p+-layer. Relatively complete and uniform structure was obtained by slowing down cooling rate between peak temperature and 550 C. The result of the present work implies that a moderate thick pn junction can be formed by lower cooling rate using peak temperature range from 830 C to 880 C.
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Proceedings
2016 3rd International Conference on Mechatronics and Information Technology
Part of series
Advances in Computer Science Research
Publication Date
April 2016
ISBN
978-94-6252-184-1
ISSN
2352-538X
DOI
https://doi.org/10.2991/icmit-16.2016.150How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Xianfeng Feng
AU  - Chang Liu
PY  - 2016/04
DA  - 2016/04
TI  - Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell
BT  - 2016 3rd International Conference on Mechatronics and Information Technology
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmit-16.2016.150
DO  - https://doi.org/10.2991/icmit-16.2016.150
ID  - Feng2016/04
ER  -