Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell
Xianfeng Feng, Chang Liu
Available Online April 2016.
- https://doi.org/10.2991/icmit-16.2016.150How to use a DOI?
- the structure of Al-p+ layer, cooling rate, n-type silicon solar cell
- In this paper, we have made a simple Al-p+ layer on n-type silicon wafers with a commercially available aluminum paste, screen-printing and traditional annealing furnace. The influences of firing cooling rate on the structure and thickness of Al-Si recrystalline layer are discussed. By changing the cooling rate and peak temperature, we find the general relationship between cooling rate and the structure of p+-layer. Relatively complete and uniform structure was obtained by slowing down cooling rate between peak temperature and 550 C. The result of the present work implies that a moderate thick pn junction can be formed by lower cooling rate using peak temperature range from 830 C to 880 C.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Xianfeng Feng AU - Chang Liu PY - 2016/04 DA - 2016/04 TI - Effects of cooling rate on the structural Al-p+ layer for n-type silicon solar cell BT - 2016 3rd International Conference on Mechatronics and Information Technology PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/icmit-16.2016.150 DO - https://doi.org/10.2991/icmit-16.2016.150 ID - Feng2016/04 ER -