Removal of Less Volatile Impurities from Crude Indium by Vacuum Distillation
- DOI
- 10.2991/icmit-16.2016.82How to use a DOI?
- Keywords
- Crude Indium; Less Volatile Impurities; Purification; Saturated Vapor Pressure; Vacuum Distillation.
- Abstract
The less volatile impurities has been eliminated by high temperature vacuum distillation of crude indium. The experiment was carried out in a self-designed vacuum distillation furnace. The temperature of distillation experiment was carried out at 1273~1373K and samples of condensate were collected at time intervals of 2, 3, 4 and 5 hour.The content of Ni, Cu, Fe in the crude indium have a little changed with the distillation time extension or the distillation temperature ascension. Both distillation temperature and holding time are principal factors that affected the removal of Sn from In by vacuum distillation. Compared with distillation time, temperature on the removal of less volatile impurities effects is more significant, So the distillation temperature was more important than distillation time. The best conditions of removal of less volatile impurities from crude indium under dynamic vacuum of 1~5Pa were as follows: 1348K and 2h. Under this condition, the content of impurities could be reduce to the standard of 5N such as Sn Cu Fe Ni in the crude indium that have high boiling point. The ELEMENT-GD have been used in testing the element contents of the samples.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yong Deng AU - Dongsheng Li AU - Dingchuan Zhang AU - Heng Xiong PY - 2016/04 DA - 2016/04 TI - Removal of Less Volatile Impurities from Crude Indium by Vacuum Distillation BT - Proceedings of the 2016 3rd International Conference on Mechatronics and Information Technology PB - Atlantis Press SP - 455 EP - 460 SN - 2352-538X UR - https://doi.org/10.2991/icmit-16.2016.82 DO - 10.2991/icmit-16.2016.82 ID - Deng2016/04 ER -