Simulations of diamond heat spreader for the thermal management of GaN HEMT
Authors
Shirui Pu, Wenbo Luo, Yao Shuai, Chuangui Wu, Wanli Zhang
Corresponding Author
Shirui Pu
Available Online November 2016.
- DOI
- 10.2991/icmia-16.2016.34How to use a DOI?
- Keywords
- diamond heat spreader, thermal management, GaN HEMT
- Abstract
A diamond heat spreader has been combined with Si microchannel for the improvement of the hotspots cooling capability for GaN high power electronic devices. The effects of the diamond heat spreader and Si die have been simulated using steady model by finite element analysis. It was found that the diamond spreader can reduce the maximal temperature of GaN device. The effect of thickness of Si die on maximum gate temperature will be increases linearly with the increase of total power. These methodology shows promising way to cool AlGaN/GaN HEMTs on Si.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Shirui Pu AU - Wenbo Luo AU - Yao Shuai AU - Chuangui Wu AU - Wanli Zhang PY - 2016/11 DA - 2016/11 TI - Simulations of diamond heat spreader for the thermal management of GaN HEMT BT - Proceedings of the 2016 5th International Conference on Measurement, Instrumentation and Automation (ICMIA 2016) PB - Atlantis Press SP - 184 EP - 188 SN - 1951-6851 UR - https://doi.org/10.2991/icmia-16.2016.34 DO - 10.2991/icmia-16.2016.34 ID - Pu2016/11 ER -