Design of High Performance SRAM Based on Single-Port Sense Amplifier

DOI

10.2991/icimm-15.2015.36How to use a DOI?

Keywords

SRAM circuit design; low power consumption; high performance;8T-SRAM[1]

Abstract

Through the rapid development of integrated circuits,high performance and low power consumption always as the same goal for the IC designer, Especially in SRAM design.This paper described a full-custom design of high performance SRAM,the full-custom design using 40nm process, based on a new single-port sense amplifier to the traditional full-custom on the read out circuit,the timing and the performance has been greatly improved,the power consumption has been greatly reduced.So,compared with the traditional full-custom,the new design have a great advantage of the high performance and low power consumption.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shunrui Li
AU  - Zuocheng Xing
AU  - Jianjun Chen
AU  - Zhentao Li
PY  - 2015/07
DA  - 2015/07
TI  - Design of High Performance SRAM Based on Single-Port Sense Amplifier
BT  - Proceedings of the 5th International Conference on Information Engineering for Mechanics and Materials
PB  - Atlantis Press
SP  - 187
EP  - 193
SN  - 2352-5401
UR  - https://doi.org/10.2991/icimm-15.2015.36
DO  - 10.2991/icimm-15.2015.36
ID  - Li2015/07
ER  -