Design of CMOS UWB Noise Amplifier with Noise Canceling Technology

DOI

10.2991/icfcce-14.2014.13How to use a DOI?

Keywords

CMOS, UWB, low-noise amplifiers

Abstract

A TSMC 0.18 µm RF CMOS low-noise amplifier (LNA) for 3 GHz–5GHz ultra-wideband (UWB) applications is presented. The designed LNA employs single-ended to differential conversion and is successfully implemented using the noise-canceling technique. This paper introduces common-gate stage performance and noise figure(NF)optimization. Simulation results show that the proposed circuit network achieves a voltage gain of 17.34dB-19.6dB and noise figure of 2.02dB-2.67dB over the band of interest, consuming 12.5mW from a 1.8V power supply voltage.

Copyright

© 2014, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ya Gao
AU  - Ningzhang Wang
AU  - Yan Zhao
PY  - 2014/03
DA  - 2014/03
TI  - Design of CMOS UWB Noise Amplifier with Noise Canceling Technology
BT  - Proceedings of the 2014 International Conference on Future Computer and Communication Engineering
PB  - Atlantis Press
SP  - 51
EP  - 54
SN  - 1951-6851
UR  - https://doi.org/10.2991/icfcce-14.2014.13
DO  - 10.2991/icfcce-14.2014.13
ID  - Gao2014/03
ER  -