Metal-Assisted Chemical Etching of Silicon 3D Nanostructure Using Direct Electric Field

DOI

10.2991/icectt-15.2015.20How to use a DOI?

Keywords

noble metal; 3D nanostructure; direct electric field; controllable fabrication

Abstract

Metal-assisted chemical etching (MaCE) of silicon (Si) is a well-used method for the fabrication of Si nanostructures. To simplify the control etching for the fabrication of Si 3D nanostructures, we developed a new method using direct electric field to control the etching direction. We examined the MaCE process in the electric field, and evaluated the effect of different electric field frequencies on the production of Si nanostructures. The results demonstrate that electric fields can effectively control etching direction and can be used to fabricate Si 3D nanostructures. Optimization of the electric current density and electric field frequency range has been performed.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiaodong Jiao
AU  - Yan Chao
AU  - Liqun Wu
AU  - Anqi Yao
PY  - 2015/11
DA  - 2015/11
TI  - Metal-Assisted Chemical Etching of Silicon 3D Nanostructure Using Direct Electric Field
BT  - Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation
PB  - Atlantis Press
SP  - 101
EP  - 105
SN  - 2352-5401
UR  - https://doi.org/10.2991/icectt-15.2015.20
DO  - 10.2991/icectt-15.2015.20
ID  - Jiao2015/11
ER  -