Effect of Side Error on the Static Displacement of Micro-resonator
- 10.2991/iccmcee-15.2015.1How to use a DOI?
- Side error of the movable fingers; The initial overlap length; Static displacement; Dc bias voltage
In view of the practical situation, sometimes there is side error of the comb capacitor through superposition of the deep reactive ion etching (DRIE) process, and these manufacturing tolerances can lead to the movable comb fingers offset. Using the software of ANSYS to explore the electrostatic-structural coupled field. Then, the effect of sensitive direction offsets on the static displacement of micro-resonator is analyzed, in addition, the different initial finger overlap, dc bias voltage and side error are considered based on the traditional structure, at the same time, the fringe effect and the corner-effect of comb need to be taken into consideration. The ideas and the simulation results in this paper have a guiding significance for improving the performance of the micro-resonators.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Fen Gao AU - ShuYing Hao AU - Chengkun Qi AU - JingJing Feng AU - Huijie Li PY - 2015/11 DA - 2015/11 TI - Effect of Side Error on the Static Displacement of Micro-resonator BT - Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering PB - Atlantis Press SP - 1 EP - 5 SN - 2352-5401 UR - https://doi.org/10.2991/iccmcee-15.2015.1 DO - 10.2991/iccmcee-15.2015.1 ID - Gao2015/11 ER -