Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics

DOI

10.2991/emim-16.2016.117How to use a DOI?

Keywords

Aluminum nitride; Band-gap semiconductor; Characteristic; Production; Application

Abstract

Aluminum nitride is wide and direct band gap compound semiconductor material. High temperature strength, good thermal conductivity, small thermal expansion coefficient, strong corrosion resistance, good dielectric properties and other characteristics make aluminum nitride as impact resistance material, crucible materials, and conductive materials widely applied in various fields. This paper reviews the production method of aluminum nitride powder and its application in different fields.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xinru Fu
PY  - 2016/04
DA  - 2016/04
TI  - Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics
BT  - Proceedings of the 6th International Conference on Electronic, Mechanical, Information and Management Society
PB  - Atlantis Press
SP  - 555
EP  - 558
SN  - 2352-538X
UR  - https://doi.org/10.2991/emim-16.2016.117
DO  - 10.2991/emim-16.2016.117
ID  - Fu2016/04
ER  -