Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics
Available Online April 2016.
- https://doi.org/10.2991/emim-16.2016.117How to use a DOI?
- Aluminum nitride; Band-gap semiconductor; Characteristic; Production; Application
- Aluminum nitride is wide and direct band gap compound semiconductor material. High temperature strength, good thermal conductivity, small thermal expansion coefficient, strong corrosion resistance, good dielectric properties and other characteristics make aluminum nitride as impact resistance material, crucible materials, and conductive materials widely applied in various fields. This paper reviews the production method of aluminum nitride powder and its application in different fields.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Xinru Fu PY - 2016/04 DA - 2016/04 TI - Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics BT - 6th International Conference on Electronic, Mechanical, Information and Management Society PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/emim-16.2016.117 DO - https://doi.org/10.2991/emim-16.2016.117 ID - Fu2016/04 ER -