Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers

DOI

10.2991/emcpe-16.2016.61How to use a DOI?

Keywords

Si/PEDOT:PSS, hybrid solar cells, SiNx:H passivation.

Abstract

A patterned silicon nitride (SiNx:H) passivation layer was employed to improve the performance of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) (Si/PEDOT:PSS) hybrid solar cells, achieving of an enhancement in the power conversion efficiency (PCE) of 0.6%. The insertion of patterned SiNx:H layer with a 80% SiNx:H-to-substrate ratio boosted the open circuit voltage (Voc) from 523.1 mV to 573.4 mV, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma enhanced chemical vapor deposition and lithography processes.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yiling Sun
AU  - Jichun Ye
AU  - Pingqi Gao
AU  - Yong Xiang
PY  - 2016/08
DA  - 2016/08
TI  - Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers
BT  - Proceedings of the 2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics
PB  - Atlantis Press
SP  - 290
EP  - 293
SN  - 2352-5401
UR  - https://doi.org/10.2991/emcpe-16.2016.61
DO  - 10.2991/emcpe-16.2016.61
ID  - Sun2016/08
ER  -