The design of a high-temperature MEMS pressure sensor with integrated temperature compensation and signal-conditioning circuits
Authors
Zong Yao, Wang-Wang Li, Di-Ya Zhang, Lei Qi, Bin Zhang, Cheng Lei, Xin Li, Ting Liang, Ji-Jun Xiong
Corresponding Author
Zong Yao
Available Online December 2016.
- DOI
- 10.2991/eeeis-16.2017.51How to use a DOI?
- Keywords
- High-temperature piezoresistive pressure sensor; Temperature compensation; Signal-conditioning circuit
- Abstract
A high-temperature MEMS pressure sensor with integrated temperature compensation and signal-conditioning circuits is reported in this work. The paper introduces the design and fabrication of the sensor, including the pressure-sensitive chip, the temperature compensation method, the signal-conditioning circuit and the sensor's assembly structure. According to the test result, the sensor has the advantages of high accuracy and sensitivity, low temperature drift and 0V~5V standard voltage signal output. The sensor can be operated long-term in the range of 50 øC to 220 øC which is expected to be highly applicable to pressure measurements in harsh environments.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Zong Yao AU - Wang-Wang Li AU - Di-Ya Zhang AU - Lei Qi AU - Bin Zhang AU - Cheng Lei AU - Xin Li AU - Ting Liang AU - Ji-Jun Xiong PY - 2016/12 DA - 2016/12 TI - The design of a high-temperature MEMS pressure sensor with integrated temperature compensation and signal-conditioning circuits BT - Proceedings of the 2nd Annual International Conference on Electronics, Electrical Engineering and Information Science (EEEIS 2016) PB - Atlantis Press SP - 395 EP - 406 SN - 2352-5401 UR - https://doi.org/10.2991/eeeis-16.2017.51 DO - 10.2991/eeeis-16.2017.51 ID - Yao2016/12 ER -