A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier
L. Cheng, P. Li, T.T. Mo
Available Online June 2015.
- 10.2991/cisia-15.2015.66How to use a DOI?
- power amplifier; class F;SOI; efficiency
In this paper, a 1.9 GHz high efficiency power amplifier (PA) for wireless applications is present. The PA is a two stage class-F power amplifier. The drive stage is self-biased cascode structure and the output stage is common source. The PA is designed and simulated in 0.18 ?m silicon-on-insulator (SOI) technology. The simulation results show that at 1.9 GHz, this class-F PA can achieve 50 % PAE (power added efficiency) at (1dB compression point) output power of 25 dBm and the linear gain is 20 dB.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - L. Cheng AU - P. Li AU - T.T. Mo PY - 2015/06 DA - 2015/06 TI - A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier BT - Proceedings of the International Conference on Computer Information Systems and Industrial Applications PB - Atlantis Press SP - 247 EP - 249 SN - 2352-538X UR - https://doi.org/10.2991/cisia-15.2015.66 DO - 10.2991/cisia-15.2015.66 ID - Cheng2015/06 ER -