A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier

DOI

10.2991/cisia-15.2015.66How to use a DOI?

Keywords

power amplifier; class F;SOI; efficiency

Abstract

In this paper, a 1.9 GHz high efficiency power amplifier (PA) for wireless applications is present. The PA is a two stage class-F power amplifier. The drive stage is self-biased cascode structure and the output stage is common source. The PA is designed and simulated in 0.18 ?m silicon-on-insulator (SOI) technology. The simulation results show that at 1.9 GHz, this class-F PA can achieve 50 % PAE (power added efficiency) at (1dB compression point) output power of 25 dBm and the linear gain is 20 dB.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - L. Cheng
AU  - P. Li
AU  - T.T. Mo
PY  - 2015/06
DA  - 2015/06
TI  - A 1.9 GHZ High Efficiency Class-F SOI CMOS Power Amplifier
BT  - Proceedings of the International Conference on Computer Information Systems and Industrial Applications
PB  - Atlantis Press
SP  - 247
EP  - 249
SN  - 2352-538X
UR  - https://doi.org/10.2991/cisia-15.2015.66
DO  - 10.2991/cisia-15.2015.66
ID  - Cheng2015/06
ER  -