Study of gas supply way and velocity chosen during the process of MPCVD diamond
Authors
XiaoJing Li, ShunQi Zheng, Yangsheng Zheng, Wenqing Wang, Renna Wu, Rui Li
Corresponding Author
XiaoJing Li
Available Online May 2015.
- DOI
- 10.2991/asei-15.2015.132How to use a DOI?
- Keywords
- Microwave plasma chemical vapor deposition (MPCVD), Gas supply, Velocity
- Abstract
The Microwave plasma chemical vapor deposition (MPCVD) method was used to make diamond film in this paper. The influence of working gas supply mode and velocity were investigated using numerical simulation method. The distribution of gas flow rate at two different gas supply modes was analyzed by software Fluent. The results showed that, the gas supply mode whose gas inlet is a hole located at the bottom of the plunger is a better choice for the formation of uniform film, gas velocity is chosen between 5m/s to 10m/s
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - XiaoJing Li AU - ShunQi Zheng AU - Yangsheng Zheng AU - Wenqing Wang AU - Renna Wu AU - Rui Li PY - 2015/05 DA - 2015/05 TI - Study of gas supply way and velocity chosen during the process of MPCVD diamond BT - Proceedings of the 2015 International conference on Applied Science and Engineering Innovation PB - Atlantis Press SP - 697 EP - 701 SN - 2352-5401 UR - https://doi.org/10.2991/asei-15.2015.132 DO - 10.2991/asei-15.2015.132 ID - Li2015/05 ER -