Proceedings of the 2015 International conference on Applied Science and Engineering Innovation

A Novel 8T SRAM Cell with Improved Read and Write Margins

Authors
Song Li, Zhiting Lin, Jiubai Zhang, Yuchun Peng, Xiulong Wu
Corresponding Author
Song Li
Available Online May 2015.
DOI
10.2991/asei-15.2015.128How to use a DOI?
Keywords
Single-bit; SRAM; Stability; RSNM; HSNM; WM
Abstract

A highly stable 8T SRAM cell is presented to improve the Static Noise Margin (SNM). The proposed 8T SRAM cell uses a single-bit line structure to perform read and write operation. The design enhances the write ability by breaking-up the feedback loop of the inverter pair. It also improves the read stability by eliminating the effects from the bit-line. The simulations show that the proposed 8T cell offers 2.07x read static noise margin, 1.41x and 2.60x in write ‘0’ margin compared to the conventional 6T cell and 7T cell, respectively. Besides, the proposed structure has a significant improvement in writing ‘1’ operation and HSNM.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

Volume Title
Proceedings of the 2015 International conference on Applied Science and Engineering Innovation
Series
Advances in Engineering Research
Publication Date
May 2015
ISBN
978-94-62520-94-3
ISSN
2352-5401
DOI
10.2991/asei-15.2015.128How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Song Li
AU  - Zhiting Lin
AU  - Jiubai Zhang
AU  - Yuchun Peng
AU  - Xiulong Wu
PY  - 2015/05
DA  - 2015/05
TI  - A Novel 8T SRAM Cell with Improved Read and Write Margins
BT  - Proceedings of the 2015 International conference on Applied Science and Engineering Innovation
PB  - Atlantis Press
SP  - 679
EP  - 682
SN  - 2352-5401
UR  - https://doi.org/10.2991/asei-15.2015.128
DO  - 10.2991/asei-15.2015.128
ID  - Li2015/05
ER  -