A Modeling and Simulation Method of SiC MOSFET Module

DOI

10.2991/ammsa-18.2018.60How to use a DOI?

Keywords

SiC MOSFET; model; simulation; parasitic parameter extraction

Abstract

In recent years, silicon carbide and other wide band gap semiconductors have become one of the strategic commanding heights in the global high-technology field. As a wide band gap semiconductor, SiC material which can be used to make SiC device is paid much attention in semiconductor and power field due to its advantages. Compared with Si device, SiC device can achieve high switching speed and low on-resistance. Because of the differences in their characteristics, the model of SiC device is different from Si device. In this paper, a modeling and simulation method of a SiC MOSFET module is proposed. Firstly, the physical structure is shown to analyze the source of model parameters; Secondly, according to the relating characteristic curves, the chip model is built; Thirdly, packaging parasitic parameters of SiC MOSFET module are extracted to make the module model more precise; Then, the model of SiC MOSFET module is built and double-pulse simulation circuit is established to observe the switching parameters. Finally, the comparison of simulation and test results is made,which proves the validity of the model and the feasibility of the method.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jinyuan Li
AU  - Meiting Cui
AU  - Shuai Sun
AU  - Yujie Du
PY  - 2018/05
DA  - 2018/05
TI  - A Modeling and Simulation Method of SiC MOSFET Module
BT  - Proceedings of the 2018 2nd International Conference on Applied Mathematics, Modelling and Statistics Application (AMMSA 2018)
PB  - Atlantis Press
SP  - 289
EP  - 292
SN  - 1951-6851
UR  - https://doi.org/10.2991/ammsa-18.2018.60
DO  - 10.2991/ammsa-18.2018.60
ID  - Li2018/05
ER  -