3D Simulation of the Closed Shell-Electrode Detector

DOI

10.2991/ame-17.2017.54How to use a DOI?

Keywords

Closed Shell-Electrode Detector (CSED); 3D-Trench electrode detector, device simulation; charge collection property; radiation.

Abstract

A new structure of 3D detectors has been proposed. In order to separate it from the non-etch-through 3D-Trench electrode detectors, we call it as the Closed Shell-Electrode Detector (CSED, Chinese Patent #ZL201620361767.1). The detector concept of the CSED will be described in detail here. Full 3D simulations of the performance behavior of the CSED will be carried out and presented. These simulations include detector potential, electric field, and electron (or hole) concentration profiles, as well as detector leakage current, capacitance, and charge collection properties. Comprehensive comparisons between the CSED and the non-etch-through 3D-Trench electrode detectors will be made. The novel CSED has much better electric field profiles near the backside and are much better isolated from neighboring cells than that in non-etch-through 3D-Trench electrode detectors.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Ming-Fu Feng
AU  - Zheng Li
PY  - 2017/04
DA  - 2017/04
TI  - 3D Simulation of the Closed Shell-Electrode Detector
BT  - Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)
PB  - Atlantis Press
SP  - 321
EP  - 328
SN  - 2352-5401
UR  - https://doi.org/10.2991/ame-17.2017.54
DO  - 10.2991/ame-17.2017.54
ID  - Feng2017/04
ER  -