Development of Ultra-fast 3D Silicon Detectors: 3D Simulation and Modeling of 3D-trench Electrode Detector
Man-Wen Liu, Zheng Li
Available Online April 2017.
- https://doi.org/10.2991/ame-17.2017.18How to use a DOI?
- Keywords--ultra-fast 3D silicon detector; electric potential; electric field; response time; breakdown consideration
- A square 3D-trench electrode detector structure based on the fast readout electronics is simulated in this paper using TCAD tools. Due to the small size of this structure, the detector is intrinsically rad-hard and it's response time can be as fast as 10's of ps. Electric characteristics including electric potential and electric field have been simulated. From those characteristics, we focus on studying the improvement of the detector compared to all column electrode ultra-fast 3D silicon detector in electric potential and electric field distributions, etc. For example, the ''slow region" in the center of all column electrode detector will not appear in our new detector structure. Furthermore, we take the breakdown consideration of the 3D-trench electrode detector on this paper.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Man-Wen Liu AU - Zheng Li PY - 2017/04 DA - 2017/04 TI - Development of Ultra-fast 3D Silicon Detectors: 3D Simulation and Modeling of 3D-trench Electrode Detector BT - 3rd Annual International Conference on Advanced Material Engineering (AME 2017) PB - Atlantis Press SN - 2352-5401 UR - https://doi.org/10.2991/ame-17.2017.18 DO - https://doi.org/10.2991/ame-17.2017.18 ID - Liu2017/04 ER -