Effect of Hole Transport Layers on the Performance of Organic Optoelectronic Devices based on PBDB-T:ITIC Bulk Heterojunction
Shan-Shan Zhang, Xiao-Hua Zhang, Jiang Huang
Available Online April 2017.
- https://doi.org/10.2991/ame-17.2017.13How to use a DOI?
- Organic optoelectronic device, Power conversion efficiency, Detectivity, Hole transport layer.
- In this work, the organic optoelectronic devices with both photovoltaic and detection performance were fabricated based on a blend of the polymer poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)- benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7'-bis(2-ethylhexyl)benzo [1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) with the non-fullerene acceptor of 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno [2,3-d:2',3'-d']- s-indaceno[1,2-b:5,6-b'] dithio-phene) (ITIC). Meanwhile, the different hole transport layers (HTL) materials of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and N,N'-diphenyl-N,N'-bis(3-methyllphenyl)-(1,1'-biphen-yl)-4,4'-diamine (TPD) were adopted to modify the interface of organic active layer and Ag/MoO3 electrode. The result showed that without thermal annealing of PBDB-T:ITIC, the photovoltaic device with TPD HTL exhibited an improvement in power conversion efficiency (PCE) from 4.45% to 5.26% compared with the control device without HTL. Moreover, by analyzing the dark current behavior after thermal annealing, it was found that the TPD HTL could effectively suppress the leakage current from Ag/MoO3 electrode to the active layer. As a result, an efficient organic photo detector with a detectivity of 3.87×1010 Jones was achieved.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Shan-Shan Zhang AU - Xiao-Hua Zhang AU - Jiang Huang PY - 2017/04 DA - 2017/04 TI - Effect of Hole Transport Layers on the Performance of Organic Optoelectronic Devices based on PBDB-T:ITIC Bulk Heterojunction BT - 3rd Annual International Conference on Advanced Material Engineering (AME 2017) PB - Atlantis Press SN - 2352-5401 UR - https://doi.org/10.2991/ame-17.2017.13 DO - https://doi.org/10.2991/ame-17.2017.13 ID - Zhang2017/04 ER -