Design of Analysis Platform Used for Studying Soft Error Characteristic of 3D SRAM

DOI

10.2991/amcce-15.2015.304How to use a DOI?

Keywords

Three-dimensional static random access memory (3D SRAM); soft error; analysis platform; cross section; single event upset (SEU); multi cell upset (MCU)

Abstract

This paper designs a novel 3D SRAM soft error analysis platform. It is used for studying the soft error characteristic of 3D SRAM stacked by multi dies and guiding the radiation hardened design for 3D SRAM. This platform integrates simulation tools including Geant4, TCAD and Nanosim, data recording and processing tools ROOT, layout processing tools Calibre, and Perl and Shell script used for linking task and analyzing results. After inputting the stacked structure, technology, circuit netlist and layout of 3D SRAM and incident particles information, this platform can simulate the particle striking 3D SRAM automatically, and then we get some kinds of cross sections, error information in a single word and sensitive node distribution for 3D SRAM. A 2 die stacked 3D SRAM based on 65nm CMOS technology is analyzed through this platform.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Peng Li
AU  - MinXuan Zhang
AU  - ZhenYu Zhao
AU  - Quan Deng
PY  - 2015/04
DA  - 2015/04
TI  - Design of Analysis Platform Used for Studying Soft Error Characteristic of 3D SRAM
BT  - Proceedings of the 2015 International Conference on Automation, Mechanical Control and Computational Engineering
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/amcce-15.2015.304
DO  - 10.2991/amcce-15.2015.304
ID  - Li2015/04
ER  -