Proceedings of the 2015 International Conference on Artificial Intelligence and Industrial Engineering

Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering

Authors
N. Promros, M. Shaban, R. Baba, T. M. Mostafa, T. Yoshitake, M. Takahara
Corresponding Author
N. Promros
Available Online July 2015.
DOI
10.2991/aiie-15.2015.111How to use a DOI?
Keywords
Iron disilicide; FTDCS,Heterojunction; I-V characteristic; Carrier transport
Abstract

The fabrication of n-type -FeSi2/p-type Si hetero junctions was accomplished by FTDC Sat a substrate temperature of 600°Cwithout post-annealing. Their current-voltage characteristic curves were measured at low temperatures ranging from 300 K down to 50 K. In order to examine the mechanism of carrier transport in the hetero junctions using thermionic emission theory, the ideality factor was estimated from the slope of the linear part of forward lnJ-V characteristic curves. In the temperature range from 300 K down to 225 K, the ideality factor was 1.23 at 300 K and increased to 2.02 at 225 K. The ideality factor values 2 implied that the mechanism of carrier transport was governed by a recombination process. In the temperature range from 200 K down to 50 K, the ideality factor was 3.34 at 200 K and increased to 15.56at 50 K. Parameter A was calculated to be constant. The temperature dependent ideality factor, together with the constant value of parameter A, implied that the predominant mechanism of carrier transport was a trap-assisted multi-step tunneling process. At highly applied forward bias voltage, the mechanism of carrier transport was changed to a space charge limited current process.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2015 International Conference on Artificial Intelligence and Industrial Engineering
Series
Advances in Intelligent Systems Research
Publication Date
July 2015
ISBN
10.2991/aiie-15.2015.111
ISSN
1951-6851
DOI
10.2991/aiie-15.2015.111How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - N. Promros
AU  - M. Shaban
AU  - R. Baba
AU  - T. M. Mostafa
AU  - T. Yoshitake
AU  - M. Takahara
PY  - 2015/07
DA  - 2015/07
TI  - Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering
BT  - Proceedings of the 2015 International Conference on Artificial Intelligence and Industrial Engineering
PB  - Atlantis Press
SP  - 407
EP  - 410
SN  - 1951-6851
UR  - https://doi.org/10.2991/aiie-15.2015.111
DO  - 10.2991/aiie-15.2015.111
ID  - Promros2015/07
ER  -