Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering
- DOI
- 10.2991/aiie-15.2015.111How to use a DOI?
- Keywords
- Iron disilicide; FTDCS,Heterojunction; I-V characteristic; Carrier transport
- Abstract
The fabrication of n-type -FeSi2/p-type Si hetero junctions was accomplished by FTDC Sat a substrate temperature of 600°Cwithout post-annealing. Their current-voltage characteristic curves were measured at low temperatures ranging from 300 K down to 50 K. In order to examine the mechanism of carrier transport in the hetero junctions using thermionic emission theory, the ideality factor was estimated from the slope of the linear part of forward lnJ-V characteristic curves. In the temperature range from 300 K down to 225 K, the ideality factor was 1.23 at 300 K and increased to 2.02 at 225 K. The ideality factor values 2 implied that the mechanism of carrier transport was governed by a recombination process. In the temperature range from 200 K down to 50 K, the ideality factor was 3.34 at 200 K and increased to 15.56at 50 K. Parameter A was calculated to be constant. The temperature dependent ideality factor, together with the constant value of parameter A, implied that the predominant mechanism of carrier transport was a trap-assisted multi-step tunneling process. At highly applied forward bias voltage, the mechanism of carrier transport was changed to a space charge limited current process.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - N. Promros AU - M. Shaban AU - R. Baba AU - T. M. Mostafa AU - T. Yoshitake AU - M. Takahara PY - 2015/07 DA - 2015/07 TI - Mechanism of Carrier Transport at Low Temperatures in n-Type Beta-FeSi2/p-Type Si Heterojunctions Fabricated by Facing-Target Direct-Current Sputtering BT - Proceedings of the 2015 International Conference on Artificial Intelligence and Industrial Engineering PB - Atlantis Press SP - 407 EP - 410 SN - 1951-6851 UR - https://doi.org/10.2991/aiie-15.2015.111 DO - 10.2991/aiie-15.2015.111 ID - Promros2015/07 ER -