Static memory leak detection based on a new memory model
Authors
Hangyuan Liu, Hua Zhang
Corresponding Author
Hangyuan Liu
Available Online November 2016.
- DOI
- 10.2991/aiea-16.2016.69How to use a DOI?
- Keywords
- Memory leaks; Static detection; Memory model.
- Abstract
Memory leaks of static analysis need to be more accurate to determine memory state of different times. The current static memory model has a high false positive rate and false negative rate, mainly because the current memory model cannot accurately represent memory state and memory hierarchy. In this paper, a domain-sensitive memory model that can represent the memory hierarchy is proposed. On this basis, a static memory leak detection method is implemented. The experimental results show that the model has high accuracy and detection efficiency.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Hangyuan Liu AU - Hua Zhang PY - 2016/11 DA - 2016/11 TI - Static memory leak detection based on a new memory model BT - Proceedings of the 2016 International Conference on Artificial Intelligence and Engineering Applications PB - Atlantis Press SP - 389 EP - 394 SN - 2352-538X UR - https://doi.org/10.2991/aiea-16.2016.69 DO - 10.2991/aiea-16.2016.69 ID - Liu2016/11 ER -