Mg-Doped CdTeO3 Quantum Dot Sensitized Solar Cells

DOI

10.2991/aeece-15.2015.175How to use a DOI?

Keywords

Solar cell, p-type, doping

Abstract

To study the influence of doping on p-type solar cells, we use the p-type NiO/CdTeO3 structure to fabricate Mg-doped CdTeO3 quantum dot-sensitized solar cells (QDSSCs), by doping CdTeO3-sensitized NiO photocathode with dopant element Mg. When the doping ratio of Mg is 1:30 and the successive ionic layer adsorption and reaction (SILAR) cycles are 2, we get the short-circuit current density of 0.387 mA/cm2, which is obviously higher than that (0.348 mA/cm2) of the undoped ones. Here in this report, we emphatically analyzed the effect of doping ratio and SILAR cycles on the properties of QDSSCs. And it is an important attempt on the development of p-type NiO/CdTeO3 QDSSCs.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yuanyuan Li
AU  - Xiaoping Zou
AU  - Chuan Zhao
PY  - 2015/09
DA  - 2015/09
TI  - Mg-Doped CdTeO3 Quantum Dot Sensitized Solar Cells
BT  - Proceedings of the International Conference on Advances in Energy, Environment and Chemical Engineering
PB  - Atlantis Press
SP  - 848
EP  - 854
SN  - 2352-5401
UR  - https://doi.org/10.2991/aeece-15.2015.175
DO  - 10.2991/aeece-15.2015.175
ID  - Li2015/09
ER  -