Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications

Abstract

The e ects of gate-recessing on the performance parameters in AlGaN/GaN/AlGaN double-heterojunction high electron amobility transistor are presented. The accuracy of simulations is veri ed by comparing the simulated characteristics with the reported measured data. The results show that a 12nm gate- recessed AlGaN/GaN/AlGaN DH-HEMT provides a 61% reduction in threshold voltage, 20% increase in transconductance, 43% improvement in cut-o frequency and seven times improvement in breakdown voltage at the cost of 44% reduction in drain current compared to the device without gate-recess.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - YASHVIR SINGH
AU  - MOHIT PAYAL
PY  - 2013/04
DA  - 2013/04
TI  - Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications
BT  - Proceedings of the Conference on Advances in Communication and Control Systems (CAC2S 2013)
PB  - Atlantis Press
SP  - 222
EP  - 226
SN  - 1951-6851
UR  - https://www.atlantis-press.com/article/6308
ID  - SINGH2013/04
ER  -