Proceedings of the 9th Joint International Conference on Information Sciences (JCIS-06)

Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)

Authors
Neng-Fu Shih 0, Huei -Ching Huang, Chung-Yuan Kung, Chun-Chih Chiu, Hong Jyh-Wong
Corresponding Author
Neng-Fu Shih
0Hsiuping Institute of Technology
Available Online October 2006.
DOI
https://doi.org/10.2991/jcis.2006.309How to use a DOI?
Keywords
excess noise factor, mean multiplication, ionization rate
Abstract
In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) is fabricated successfully by using combined effect of band edge discontinuity and build-in potential in p-n junction. We discuss the relationships among excess noise factor (Fe), mean multiplication (Me), and the ionization rate (ks) for this SAM-SAPD. Lastly, make comparisons between the theoretical calculations and the experimental results for Fe vs. Me . In order to prove that the theoretical calculations can fit well with the experimental data, we make the suppositions for the absorption region and the ionization coefficients for each layer of the proposed SAM-SAPD.
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Proceedings
9th Joint International Conference on Information Sciences (JCIS-06)
Part of series
Advances in Intelligent Systems Research
Publication Date
October 2006
ISBN
978-90-78677-01-7
ISSN
1951-6851
DOI
https://doi.org/10.2991/jcis.2006.309How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Neng-Fu Shih
AU  - Huei -Ching Huang
AU  - Chung-Yuan Kung
AU  - Chun-Chih Chiu
AU  - Hong Jyh-Wong
PY  - 2006/10
DA  - 2006/10
TI  - Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)
BT  - 9th Joint International Conference on Information Sciences (JCIS-06)
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/jcis.2006.309
DO  - https://doi.org/10.2991/jcis.2006.309
ID  - Shih2006/10
ER  -